High-temperature silicon-on-insulator electronics for space nuclear power systems: Requirements and feasibility * † **

IEEE Transactions on Nuclear Science

Volumn 35, Issue 5, 1988, Pages 1099-1112

  Fleetwood, D M ^a   Thome, F V ^a   Tsao, S S ^a   Dressendorfer, P V ^a   Dandini, V J ^a   Schwank, J R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NUCLEAR REACTORS -- SPACE APPLICATIONS; RADIATION EFFECTS; TRANSISTORS -- SPACE APPLICATIONS;

HIGH TEMPERATURE ELECTRONICS; RADIATION HARDNESS; SILICON-ON-INSULATOR ELECTRONICS; SPACE NUCLEAR REACTOR PLATFORM; THRESHOLD VOLTAGE;

INTEGRATED CIRCUITS, VLSI;

EID: 0024092433     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.7506     Document Type: Article

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