Formation of interface traps in MOSFETs during annealing following low temperature irradiation

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1234-1240

  Saks, N S ^a   Klein, R B ^b   Griscom, D L ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT--ANNEALING; LOW TEMPERATURE ENGINEERING; PROTONS;

INTERFACE TRAPS; IONIZING RADIATION; ISOCHRONAL ANNEALING;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024167906     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25445     Document Type: Article

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