Response of Interface Traps During High-Temperature Anneals

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1590-1597

  Lelis, A J ^a   Oldham, T R ^a   DeLancey, W M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; HEAT TREATMENT--ANNEALING; SEMICONDUCTING SILICON; X-RAYS;

INTERFACE TRAPS; ISOCHRONAL ANNEALING;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026385067     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124150     Document Type: Article

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