Evidence for (100)Si/SiO2 Interfacial Defect Transformation after Ionizing Radiation

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1227-1233

  Nishioka, Yasushiro ^a,b   da Silva, Eronides F ^a,c   Ma, T P ^a  

^a YALE UNIVERSITY   (United States)

^b HITACHI LTD   (Japan)

^c FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRONIC PROPERTIES; SEMICONDUCTING SILICON;

INTERFACE TRAPS; IONIZING RADIATION;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024176413     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25444     Document Type: Article

References (6)

1. E.F. da Silva, Jr., Y. Nishioka, and T.P. Ma, “Two Distinct Interface Trap Peaks in Radiation Damaged Metal/SiO2/Si Structures,” Appl. Phys. Lett., 51(4), 270 (1987).
2. Y. Nishioka, E.F. da Silva, Jr., and T.P. Ma, “Time-Dependent Evolution of Interface Traps in Hot Electron Damaged Metal/SiO2/Si Capacitors,” IEEE Electron Dev. Lett., EDL-8, 566 (1987).
3. Y. Nishioka, E.F. da Silva, Jr., and T.P. Ma, “Radiation-Induced Interface Traps in Mo/SiO2/Si Capacitors,” IEEE Trans. Nucl. Sci., NS-34, 1166 (1987).
4. E.F. da Silva, Y. Nishioka, and T.P. Ma, “Radiation Response of MOS Capacitors Containing Fluorinated Oxides,” IEEE Trans. Nucl. Sci., NS-34, 1190 (1987).
5. V. Zekeriya and T.P. Ma, “Dependence of X-ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS Structures,” IEEE Trans. Nucl. Sci., NS-31, 1261 (1984).
6. G.J. Gerardi, E.H. Poindexter, P.J. Caplan, and N.M. Johnson, “Interface Traps and P b Centers in Oxidized (100) Silicon Wafers,” Appl. Phys. Lett., 49(6), 348 (1986).