Separation of two distinct fast interface state contributions at the (100)Si/SiO2 interface using the conductance technique

Applied Physics Letters

Volumn 60, Issue 5, 1992, Pages 624-626

  Uren, M J ^a   Brunson, K M ^a   Hodge, A M ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449006447     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.107461     Document Type: Article

References (9)