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Volumn 36, Issue 6, 1989, Pages 1784-1791

Orientation Dependence of Interface-trap Transformation

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES--SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA;

EID: 0024891798     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45370     Document Type: Article
Times cited : (18)

References (13)
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  • 2
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    • Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors
    • P.S Winokur, H.E. Boesh, Jr., J.M. McGarrity, and F.B. McLean. “Field- and Time-Dependent Radiation Effects at the SiO2 /Si Interface of Hardened MOS Capacitors.” IEEE Trans. Nucl. Sci., NS-24(6), p.2113, 1977.
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  • 3
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    • Two-stage Process for Buildup of Radiation-induced Interface States
    • P.S. Winokur, H.E. Boesh, Jr., J.M. McGarrity, and F.B. McLean. “Two-stage Process for Buildup of Radiation-induced Interface States”. J. Appl. Phys., 50(5), p.3492, 1979.
    • (1979) J. Appl. Phys , vol.50 , Issue.5 , pp. 3492
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  • 4
    • 0024176413 scopus 로고
    • Evidence for (100)Si/SiO2 Interface Defect Transformation after Ionizing Radiation
    • Y. Nishioka, E. F. da Silva, Jr., and T. P. Ma. “Evidence for (100)Si/SiO2 Interface Defect Transformation after Ionizing Radiation”. IEEE Trans. Nucl. Sci., 35(6), p.1227, 1988.
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    • Nishioka, Y.1    da Silva, E.F.2    Ma, T.P.3
  • 5
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    • The Application of Deep Level Transient Spectroscopy to the Measurement of Radiation-induced Interface State Spectra
    • C. Barnes, T. Zietlow, and K. Nakamura. “The Application of Deep Level Transient Spectroscopy to the Measurement of Radiation-induced Interface State Spectra”. IEEE Trans. Nucl. Sci., NS-35(6), p.1197, 1988.
    • (1988) IEEE Trans. Nucl. Sci , vol.NS-35 , Issue.6 , pp. 1197
    • Barnes, C.1    Zietlow, T.2    Nakamura, K.3
  • 6
    • 0024169717 scopus 로고
    • Annealing of Total Dose Damage: Redistribution of Interface State Density on <100>, <110> and <111> Orientation Silicon
    • R. E. Stahlbush, R. K. Lawrence, H. L. Hughes, and N. S. Saks. “Annealing of Total Dose Damage: Redistribution of Interface State Density on <100>, <110> and <111> Orientation Silicon”. IEEE Trans. Nucl. Sci., NS-35(6), p.1192, 1988.
    • (1988) IEEE Trans. Nucl. Sci , vol.NS-35 , Issue.6 , pp. 1192
    • Stahlbush, R.E.1    Lawrence, R.K.2    Hughes, H.L.3    Saks, N.S.4
  • 7
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    • A model of interface states and charges at the Si-SiO2 interface: Its predictions and comparisions with experiments
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    • (1981) J. Appl. Phys , vol.52 , Issue.1 , pp. 320
    • Ngai, K.L.1    White, C.T.2
  • 8
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    • Theory of continuously distributed Trap States at Si-SiO2 interfaces
    • T. Sakurai and T. Sugano, “Theory of continuously distributed Trap States at Si-SiO2 interfaces”. J. Appl. Phys., 52(4), p.2889, 1981.
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  • 9
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  • 10
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    • V. Zekeriya and T-P. Ma. “Dependence of X-ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS Structures”. IEEE Trans. Nuc. Sci., NS-31, p.1261, 1984.
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  • 11
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    • Model of Electronic States at the Si-SiO2 Interface
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  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.