Interface traps and Pb centers in oxidized (100) silicon wafers

Applied Physics Letters

Volumn 49, Issue 6, 1986, Pages 348-350

  Gerardi, Gary J ^a   Poindexter, Edward H ^a   Caplan, Philip J ^a   Johnson, Noble M ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549091646     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.97611     Document Type: Article

References (8)