Observation of Near-Interface Oxide Traps with the Charge-Pumping Technique

IEEE Electron Device Letters

Volumn 13, Issue 12, 1992, Pages 627-629

  Paulsen, R E ^a   Siergiej, R R ^a   French, M L ^a   White, M H ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

CHARGE-PUMPING TECHNIQUE; NEAR-INTERFACE OXIDE TRAPS; NONVOLATILE MEMORY DEVICES; TRAP-TO-TRAP TUNNELING TIME CONSTANT;

MOS DEVICES;

EID: 0026963425     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192866     Document Type: Article

References (8)

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