Border traps: Issues for MOS radiation response and long-term reliability

Microelectronics Reliability

Volumn 35, Issue 3, 1995, Pages 403-428

  Fleetwood, D M ^a   Shaneyfelt, M R ^a   Warren, W L ^a   Schwank, J R ^a   Meisenheimer, T L ^a   Winokur, P S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYOGENICS; ELECTRIC CURRENTS; ELECTROMAGNETIC WAVE SCATTERING; MOSFET DEVICES; OXIDES; RADIATION; RELIABILITY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

BORDER TRAP CHARGE DENSITIES; BORDER TRAP EFFECT; CHARGE PUMPING MEASUREMENTS; DUAL TRANSISTOR BORDER TRAP; INTERFACE TRAP CHARGE DENSITIES;

MOS DEVICES;

EID: 0029273555     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(95)93068-L     Document Type: Review

References (83)

1. Noise in Physical Systems and 1/f Fluctuations