Fast and slow interface state distributions on (100) and (111) Si:SiO2 surfaces following negative bias stress

Microelectronic Engineering

Volumn 28, Issue 1-4, 1995, Pages 11-14

  Uren, MJ ^a   Ostler, JM ^a   Hodge, AM ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ENERGY GAP; INTERFACES (MATERIALS); MEASUREMENTS; SEMICONDUCTING SILICON; SILICA; STRESSES; SURFACES;

BANDGAP; CONDUCTION BAND EDGE; INTERFACE STATE; NEGATIVE BIAS STRESS;

ELECTRON ENERGY LEVELS;

EID: 0029327732     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00005-S     Document Type: Article

References (11)

1. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise