Theory and Application of Charge Pumping for the Characterization of Si-SiO2 Interface and Near-Interface Oxide Traps

IEEE Transactions on Electron Devices

Volumn 41, Issue 7, 1994, Pages 1213-1216

  Paulsen, Ronald E ^a   White, Marvin H ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

charge; near interface oxide traps; pumping; Radiation effects; Si SiO2 Interface Traps; SONOS nonvolatile memories; trap to trap tunneling

Indexed keywords

CHARGE CARRIERS; ELECTRON TUNNELING; INTERFACES (MATERIALS); MOSFET DEVICES; NONVOLATILE STORAGE; OXIDES; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICA;

CHARGE PUMPING MODEL; NEAR INTERFACE OXIDE TRAPS; SHOCKLEY READ HALL STATISTICS; TRAP TO TRAP TUNNELING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0028468255     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293349     Document Type: Article

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