Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Journal of Applied Physics

Volumn 83, Issue 4, 1998, Pages 2327-2337

  Yang, H Y ^a   Niimi, H ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001681343     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366976     Document Type: Article

References (38)

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