Boron-Enhanced-Diffusion of boron: The limiting factor for ultra-shallow junctions

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 467-470

  Agarwal, Aditya ^a   Eaglesham, D J ^a   Gossmann, H J ^a   Pelaz, L ^a   Herner, S B ^a   Jacobson, D C ^a   Haynes, T E ^a   Erokhin, Y ^a   Simonton, R ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON ENHANCED DIFFUSION (BED); TRANSIENT ENHANCED DIFFUSION (TED); ULTRASHALLOW JUNCTIONS;

DIFFUSION IN SOLIDS; ION IMPLANTATION; METALLIC SUPERLATTICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTING BORON;

EID: 84886448005     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)