Analysis of tunneling currents and reliability of NMOSFET's with sub-2 nm gate oxides

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 453-456

  Yang, N ^a   Henson, W K ^a   Wortman, J J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MOS CAPACITORS; MOSFET DEVICES; OXIDES; RELIABILITY; ULTRATHIN FILMS; WEIBULL DISTRIBUTION;

GATE OXIDES; SOURCE DRAIN EXTENSION; TUNNELING CURRENTS;

ELECTRON TUNNELING;

EID: 0033347826     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)