Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

Applied Physics Letters

Volumn 71, Issue 21, 1997, Pages 3141-3143

  Agarwal, Aditya ^a,b   Gossmann, H J ^a   Eaglesham, D J ^a   Pelaz, L ^a,d   Jacobson, D C ^a   Haynes, T E ^b   Erokhin, Yu E ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c EATON CORPORATION   (United States)

^d UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000669252     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120552     Document Type: Article

References (16)

1. National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1995).
2. R. T. Hodgson, V. R. Deline, S. Mader, and J. C. Gelpey, Appl. Phys. Lett. 44, 689 (1984).
3. K. Cho, M. Numan, T. G. Finstad, W. K. Chu, J. Liu, and J. J. Wortman, Appl. Phys. Lett. 47, 1321 (1985).
4. A. E. Michel, Appl. Phys. Lett. 51, 487 (1987).
5. M. D. Giles, J. Electrochem. Soc. 138, 138 (1991).
6. D. R. Lim, C. S. Rafferty, and F. P. Klemens, Appl. Phys. Lett. 67, 2302 (1995).
7. M. Omri, C. Bonafos, A. Claverie, A. Nejim, F. Cristiano, D. Alquier, A. Martinez, and N. E. B. Cowern, Nucl. Instrum. Methods Phys. Res. B 120, 5 (1996).
8. J. Liu, V. Krishnamoorthy, H.-J. Gossmann, L. Rubin, M. E. Law, and K. S. Jones, J. Appl. Phys. 81, 1656 (1997).
9. H.-J. Gossmann, F. C. Unterwald, and H. S. Luftman, J. Appl. Phys. 73, 8237 (1993).
10. G. W. Rubloff, K. Hoffmann, M. Liehr, and D. R. Young, Phys. Rev. Lett. 58, 2379 (1987).
11. H.-J. Gossmann, C. S. Rafferty, F. C. Unterwald, and T. Boone, Appl. Phys. Lett. 67, 1558 (1995).
12. A. Agarwal, D. J. Eaglesham, H.-J. Gossmann, D. C. Jacobson, T. E. Haynes, Y. E. Erokhin, and J. M. Poate, Appl. Phys. Lett. 70, 3332 (1997).
13. M. R. Pinto, D. M. Boulin, C. S. Rafferty, R. K. Smith, J. W. M. Coughran, I. C. Kizilyalli, and M. J. Thoma, in IEDM 92, 1992, p. 923.
14. H.-J. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, J. Appl. Phys. 74, 3150 (1993).
15. R. B. Fair and J. C. C. Tsai, J. Electrochem. Soc. 124, 1107 (1977).
16. M. Jaraiz, G. H. Gilmer, J. M. Poate, and T. D. de la Rubia, Appl. Phys. Lett. 68, 409 (1996).