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Volumn , Issue , 2000, Pages 112-113
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Ultra low energy arsenic implant limits on sheet resistance and junction depth
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Author keywords
[No Author keywords available]
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Indexed keywords
ARSENIC;
DIFFUSION IN SOLIDS;
ELECTRIC RESISTANCE;
ION IMPLANTATION;
RAPID THERMAL ANNEALING;
SHEET RESISTANCE;
TRANSIENT ENHANCED DIFFUSION (TED);
SEMICONDUCTOR JUNCTIONS;
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EID: 0033725608
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (14)
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References (4)
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