Experimental examination of physical model for direct tunneling current in unstressed/stressed ultrathin gate oxides

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 461-464

  Takagi, Shin ichi ^a   Takayanagi, Mariko ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; FERMI LEVEL; GATES (TRANSISTOR); LEAKAGE CURRENTS; MODELS; MOSFET DEVICES; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; ULTRATHIN FILMS;

CAPACITANCE VOLTAGE CHARACTERISTICS; DIRECT TUNNELING CURRENT; STRESS INDUCED LEAKAGE CURRENT;

ELECTRON TUNNELING;

EID: 0033339638     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)