메뉴 건너뛰기




Volumn 8, Issue 11, 2015, Pages 3571-3579

Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy

Author keywords

charge trapping flash; electric field; in situ TEM; oxygen vacancy

Indexed keywords


EID: 84946500418     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-015-0857-0     Document Type: Article
Times cited : (37)

References (42)
  • 4
    • 33748621800 scopus 로고
    • Statistics of the recombinations of holes and electrons
    • Shockley, W.; Read, W. T. Statistics of the recombinations of holes and electrons. Phys. Rev.1952, 87, 835–842.
    • (1952) Phys. Rev. , vol.87 , pp. 835-842
    • Shockley, W.1    Read, W.T.2
  • 7
    • 63749093037 scopus 로고    scopus 로고
    • 2 gate stacks through quasiparticle energy calculations
    • 2 gate stacks through quasiparticle energy calculations. Appl. Phys. Lett.2009, 94, 122901.
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 122901
    • Choi, E.A.1    Chang, K.J.2
  • 12
    • 84880785953 scopus 로고    scopus 로고
    • 2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal-oxide-semiconductor devices
    • 2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal-oxide-semiconductor devices. J. Appl. Phys.2013, 114, 034505.
    • (2013) J. Appl. Phys. , vol.114 , pp. 034505
    • Pandey, R.K.1    Sathiyanarayanan, R.2    Kwon, U.3    Narayanan, V.4    Murali, K.V.R.M.5
  • 15
    • 33846096369 scopus 로고    scopus 로고
    • 2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments
    • 2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments. Appl. Phys. Lett.2006, 89, 262904.
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 262904
    • Broqvist, P.1    Pasquarello, A.2
  • 26
    • 84859582233 scopus 로고    scopus 로고
    • Real-time observation on dynamic growth/dissolution of conductive filaments in oxideelectrolyte- based ReRAM
    • Liu, Q.; Sun, J.; Lv, H. B.; Long, S. B.; Yin, K. B.; Wan, N.; Li, Y. T.; Sun, L. T.; Liu, M. Real-time observation on dynamic growth/dissolution of conductive filaments in oxideelectrolyte- based ReRAM. Adv. Mater.2012, 24, 1844–1849.
    • (2012) Adv. Mater. , vol.24 , pp. 1844-1849
    • Liu, Q.1    Sun, J.2    Lv, H.B.3    Long, S.B.4    Yin, K.B.5    Wan, N.6    Li, Y.T.7    Sun, L.T.8    Liu, M.9
  • 27
    • 84915747821 scopus 로고    scopus 로고
    • Evidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and ab initio time-dependent density-functional theory
    • Guedj, C.; Hung, L.; Zobelli, A.; Blaise, P.; Sottile, F.; Olevano, V. Evidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and ab initio time-dependent density-functional theory. Appl. Phys. Lett.2014, 105, 222904.
    • (2014) Appl. Phys. Lett. , vol.105 , pp. 222904
    • Guedj, C.1    Hung, L.2    Zobelli, A.3    Blaise, P.4    Sottile, F.5    Olevano, V.6
  • 28
    • 59149084242 scopus 로고    scopus 로고
    • 2/Si interface by using STEM-VEELS
    • 2/Si interface by using STEM-VEELS. Micron2009, 40, 365–369.
    • (2009) Micron , vol.40 , pp. 365-369
    • Park, J.1    Yang, M.2
  • 30
    • 43549126477 scopus 로고    scopus 로고
    • Resistive switching in transition metal oxides
    • Sawa, A. Resistive switching in transition metal oxides. Mater. Today2008, 11, 28–36.
    • (2008) Mater. Today , vol.11 , pp. 28-36
    • Sawa, A.1
  • 32
    • 84897044399 scopus 로고    scopus 로고
    • A review on resistive switching in high-κ dielectrics: A nanoscale point of view using conductive atomic force microscope
    • Lanza, M. A review on resistive switching in high-κ dielectrics: A nanoscale point of view using conductive atomic force microscope. Materials2014, 7, 2155–2182.
    • (2014) Materials , vol.7 , pp. 2155-2182
    • Lanza, M.1
  • 33
    • 34248995628 scopus 로고    scopus 로고
    • First principles investigation of defects at interfaces between silicon and amorphous high-κ oxides
    • Broqvist, P.; Pasquarello, A. First principles investigation of defects at interfaces between silicon and amorphous high-κ oxides. Microelectron. Eng.2007, 84, 2022–2027.
    • (2007) Microelectron. Eng. , vol.84 , pp. 2022-2027
    • Broqvist, P.1    Pasquarello, A.2
  • 40
    • 38949139385 scopus 로고    scopus 로고
    • 2 caused by oxygen vacancies and its effects on the gate leakage current in MOS structures
    • 2 caused by oxygen vacancies and its effects on the gate leakage current in MOS structures. Eur. Phys. J. Appl. Phys.2007, 40, 59–63.
    • (2007) Eur. Phys. J. Appl. Phys. , vol.40 , pp. 59-63
    • Mao, L.F.1    Wang, Z.O.2    Wang, J.Y.3    Zhu, C.Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.