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Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 1, 2008, Pages 199-203

First-principles simulations of the leakage current in metal-oxide- semiconductor structures caused by oxygen vacancies in HfO 2 high-K gate dielectric

(2) Mao, L F a Wang, Z O a

a SOOCHOW UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

METAL-OXIDE-SEMICONDUCTOR STRUCTURES; TUNNELING CURRENT;

CONDUCTION BANDS; DEFECT DENSITY; ELECTRON TUNNELING; GATE DIELECTRICS; LEAKAGE CURRENTS; OXYGEN VACANCIES; SEMICONDUCTOR DEVICE STRUCTURES;

MOS DEVICES;

EID: 38849184688 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200723166 Document Type: Conference Paper

Times cited : (21)

References (13)

1
- 0037421383
- H. Kim, P. McIntyre, and K. C. Saraswat, Appl. Phys. Lett. 82, 106 (2003).
- (2003) Appl. Phys. Lett , vol.82 , pp. 106
- Kim, H.¹ McIntyre, P.² Saraswat, K.C.³

2
- 79956039125
- M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D.-H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett. 81, 472 (2003).
- (2003) Appl. Phys. Lett , vol.81 , pp. 472
- Cho, M.-H.¹ Roh, Y.S.² Whang, C.N.³ Jeong, K.⁴ Nahm, S.W.⁵ Ko, D.-H.⁶ Lee, J.H.⁷ Lee, N.I.⁸ Fujihara, K.⁹

3
- 33747855477
- J. L. Gavartin, D. Muñoz Ramo, A. L. Shluger, G. Bersuker, and B. H. Lee, Appl. Phys. Lett. 89, 082908 (2006).
- (2006) Appl. Phys. Lett , vol.89 , pp. 082908
- Gavartin, J.L.¹ Muñoz Ramo, D.² Shluger, A.L.³ Bersuker, G.⁴ Lee, B.H.⁵

4
- 4944250746
- R. Puthenkovilakam and J. P. Chang, J. Appl. Phys. 96, 2701 (2004).
- (2004) J. Appl. Phys , vol.96 , pp. 2701
- Puthenkovilakam, R.¹ Chang, J.P.²

5
- 33749466366
- J. C. Garcia, A. T. Lino, L. M. R. Scolfaro, J. R. Leite, V. N. Freire, G. A. Farias, and E. F. da Silva, Jr., AIP Conf. Proc. 772, 189 (2005).
- (2005) AIP Conf. Proc , vol.772 , pp. 189
- Garcia, J.C.¹ Lino, A.T.² Scolfaro, L.M.R.³ Leite, J.R.⁴ Freire, V.N.⁵ Farias, G.A.⁶ da Silva Jr., E.F.⁷

6
- 33748299160
- M. H. Hakala, A. S. Foster, J. L. Gavartin, P. Havu, M. J. Puska, and R. M. Nieminen, J. Appl. Phys. 100, 043708 (2006).
- (2006) J. Appl. Phys , vol.100 , pp. 043708
- Hakala, M.H.¹ Foster, A.S.² Gavartin, J.L.³ Havu, P.⁴ Puska, M.J.⁵ Nieminen, R.M.⁶

7
- 33745801074
- H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda, Appl. Phys. Lett. 89, 012102 (2006).
- (2006) Appl. Phys. Lett , vol.89 , pp. 012102
- Takahashi, H.¹ Okabayashi, J.² Toyoda, S.³ Kumigashira, H.⁴ Oshima, M.⁵ Ikeda, K.⁶ Liu, G.L.⁷ Liu, Z.⁸ Usuda, K.⁹

8
- 33748979971
- O. Maida, K. Fukayama, M. Takahashi, H. Kobayashi, Y. Kim, H. Kim, and D. Choi, Appl. Phys. Lett. 89, 122112 (2006).
- (2006) Appl. Phys. Lett , vol.89 , pp. 122112
- Maida, O.¹ Fukayama, K.² Takahashi, M.³ Kobayashi, H.⁴ Kim, Y.⁵ Kim, H.⁶ Choi, D.⁷

9
- 1642588409
- W. L. Scopel, A. J. R. da Silva, W. Orellana, and A. Fazzio, Appl. Phys. Lett. 84, 1492 (2004).
- (2004) Appl. Phys. Lett , vol.84 , pp. 1492
- Scopel, W.L.¹ da Silva, A.J.R.² Orellana, W.³ Fazzio, A.⁴

10
- 0037171005
- M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard, P. J. Hasnip, S. J. Clark, and M. C. Payne, J. Phys.: Condens. Matter 14, 2717 (2002).
- (2002) J. Phys.: Condens. Matter , vol.14 , pp. 2717
- Segall, M.D.¹ Lindan, P.J.D.² Probert, M.J.³ Pickard, C.J.⁴ Hasnip, P.J.⁵ Clark, S.J.⁶ Payne, M.C.⁷

11
- 34547155687
- L. F. Mao and Ziou Wang, phys. stat. sol. (a) 204, 784 (2007).
- (2007) phys. stat. sol. (a) , vol.204 , pp. 784
- Mao, L.F.¹ Wang, Z.²

12
- 24244446233
- Y. Ando and T. Itoh, J. Appl. Phys. 61, 1497 (1987).
- (1987) J. Appl. Phys , vol.61 , pp. 1497
- Ando, Y.¹ Itoh, T.²

13
- 27344443406
- K. Xiong, J. Robertson, M. C. Gibson, and S. J. Clark, Appl. Phys. Lett. 87, 183505 (2005).
- (2005) Appl. Phys. Lett , vol.87 , pp. 183505
- Xiong, K.¹ Robertson, J.² Gibson, M.C.³ Clark, S.J.⁴

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