Self-selection unipolar HfOx-Based RRAM

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 391-395

  Tran, X A ^a   Zhu, W ^a   Liu, W J ^a   Yeo, Y C ^b   Nguyen, B Y ^c   Yu, H Y ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

^d SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Bipolar; high resistance switching (HRS); low resistance switching (LRS); resistive switching (RS); unipolar

Indexed keywords

BIPOLAR; HIGH RESISTANCE; LOW RESISTANCE; RESISTIVE SWITCHING; UNIPOLAR;

SCHOTTKY BARRIER DIODES; SWITCHING SYSTEMS;

SILICON;

EID: 84871731270     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2223821     Document Type: Article

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