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Volumn 40, Issue 1, 2007, Pages 59-63

The conduction band alignment of HfO2 caused by oxygen vacancies and its effects on the gate leakage current in MOS structures

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; GATE DIELECTRICS; LEAKAGE CURRENTS; MOS DEVICES; OXYGEN VACANCIES;

EID: 38949139385     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2007129     Document Type: Article
Times cited : (7)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.