The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 54-56

  Park, Hokyung ^a   Jo, Minseok ^a   Choi, Hyejung ^a   Hasan, Musarrat ^a   Choi, Rino ^b   Kirsch, Paul D ^c   Kang, Chang Young ^c   Lee, Byoung Hun ^c   Kim, Tae Wook ^a   Lee, Takhee ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Inha University   (South Korea)

^c SEMATECH   (United States)

Author keywords

Charge trapping; Conducting atomic force microscopy (C AFM); Hafnium oxide; Oxygen vacancy

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHARGE TRAPPING; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; OXYGEN VACANCIES;

CONDUCTING ATOMIC FORCE MICROSCOPY; HAFNIUM OXIDE; NANOSCALE NONUNIFORMITY;

MOSFET DEVICES;

EID: 37649007605     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.911992     Document Type: Article

References (15)

1. E. P. Gusev, A. Buchanan, E. Cartier, A. Kumar, D. DiMaria, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L.-A. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, "Ultrathin high-κ, gate stacks for advanced CMOS devices," in IEDM Tech. Dig., 2001, pp. 451-454.
2. J. C. Lee, H. J. Cho, C. S. Kang, S. Rhee, Y. H. Kim, R. Choi, C. Y. Kang, C. Choi, and M. Abkar, "High-κ dielectrics and MOSFET characteristics," in IEDM Tech. Dig., 2003, pp. 95-98.
3. T. Iwamoto, T. Ogura, M. Terai, H. Watanabe, H. Watanabe, N. Ikarashi, M. Miyamura, T. Tatsumi, M. Saitoh, A. Morioka, K. Watanabe, Y. Saito, Y. Yabe, T. Ikarashi, K. Masuzaki, Y. Mochizuki, and T. Mogami, "A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes," in IEDM Tech. Dig., 2003, pp. 639-642.
4. S.-C. Song, Z. Zhang, C. Huffman, J. H. Sim, S. H. Bae, P. D. Kirsch, P. Majhi, R. Choi, N. Moumen, and B. H. Lee, "Highly manufacturable advanced gate-stack technology for sub-45-nm self-aligned gate-first CMOSFETs," IEEE Trans. Electron Device, vol. 53, no. 5, pp. 979-989, May 2006.
5. H.-S. Jung, J.-H. Lee, S. K. Han, Y.-S. Kim, H. J. Lim, M. J. Kim, S. J. Doh, M. Y. Yu, N.-I. Lee, H.-L. Lee, T.-S. Jeon, H.-J. Cho, S. B. Kang, S. Y. Kim, I. S. Park, D. Kim, H. S. Baik, and Y. S. Chung, "A highly manufacturable MIPS (metal inserted poly-Si stack) technology with novel threshold voltage control," in VLSI Symp. Tech. Dig., 2005, pp. 232-233.
6. B. H. Lee, C. D. Young, R. Choi, J. H. Sim, G. Bersuker, C. Y. Kang, R. Harris, G. A. Brown, K. Matthews, S. C. Song, N. Moumen, J. Barnett, P. Lysaght, K. S. Choi, H. C. Wen, C. Huffman, H. Alshareef, P. Majhi, S. Gopalan, J. Peterson, P. Kirsh, H.-J. Li, J. Gutt, M. Gardner, H. R. Huff, P. Zeizoff, R. Murto, L. Larson, and C. Ramiller, "Intrinsic characteristics of fast transient charging effects (FCTE)," in IEDM Tech. Dig., 2004, pp. 859-862.
7. S. Zalar, A. Kumar, E. Gusev, and E. Cartier, "Threshold voltage instabilities in high-κ gate dielectric stacks," IEEE Trans. Device Mater. Rel., vol. 5, no. 1, pp. 45-64, Mar. 2005.
8. 2 gated nMOSFETs," IEEE Electron Device Lett., vol. 27, no. 8, pp. 662-664, Aug. 2006.
9. 2," in Proc. ESSDERC, 2005, pp. 367-370.
10. 2 defects by spectroscopic ellipsometry," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 22, no. 4, pp. 1337-1341, Jul. 2004.
11. 2-based high-κ gate dielectrics," in IEDM Tech. Dig. 2004, pp. 859-862.
12. 2," Appl. Phys. Lett., vol. 87, no. 6, p. 062 105, Aug. 2005.
13. 2 MOS gate stacks observed with enhanced CAFM," IEEE Electron Device Lett., vol. 27, no. 3, pp. 157-159, Mar. 2006.
14. 2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy," Appl. Phys. Lett., vol. 86, no. 6, p. 063 510, Feb. 2005.
15. 2 films at a nanometer scale using a conductive atomic force microscope," J. Appl. Phys., vol. 91, no. 4, pp. 2071-2079, Feb. 2002.