In situ observation of filamentary conducting channels in an asymmetric Ta 2 O 5-x/TaO 2-x bilayer structure

Nature Communications

Volumn 4, Issue , 2013, Pages

  Park, Gyeong Su ^a   Kim, Young Bae ^a   Park, Seong Yong ^a   Li, Xiang Shu ^a   Heo, Sung ^a   Lee, Myoung Jae ^a   Chang, Man ^a   Kwon, Ji Hwan ^b   Kim, M ^b   Chung, U In ^a   Dittmann, Regina ^c   Waser, Rainer ^c   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

^b Seoul National University   (South Korea)

^c Section JARA FIT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

TANTALUM;

ELECTRIC FIELD; ELECTRICAL POWER; INFORMATION PROCESSING; INFORMATION TECHNOLOGY; PLATINUM; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

ARTICLE; BILAYER MEMBRANE; CELL SIZE; CHANNEL GATING; CONDUCTANCE; CRYSTALLIZATION; DENSITY FUNCTIONAL THEORY; DIRECT CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD; ELECTRODE; ELECTRON MICROSCOPE; OXIDATION; OXYGEN CONCENTRATION; PHASE TRANSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84884133449     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3382     Document Type: Article

References (41)

1. Ielmini, D., Nardi, F. & Cagli, C. Universal reset characteristics of unipolar and bipolar metal-oxide RRAM. IEEE Trans. Electron Devices 58, 3246-3253 (2011).
2. Fujisaki, Y. Current status of nonvolatile semiconductor memory technology. Jpn J. Appl. Phys. 49, 100001 (2010).
3. Kim, K. From the future Si technology perspective: challenges and opportunities. IEDM Tech. Dig. 1-9 (2010).
4. Lee, M. J. et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures. Nat. Mater. 10, 625-630 (2011).
5. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632-2663 (2009).
6. Sawa, A. Resistive switching in transition metal oxides. Mater. Today 11, 28-36 (2008).
7. Rozenberg, M. J. et al. Mechanism for bipolar resistive switching in transitionmetal oxides. Phys. Rev. B 81, 20-23 (2010).
8. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 6, 833-840 (2007).
9. Blanc, J. & Staebler, D. L. Electrocoloration in SrTiO: vacancy drift and oxidation-reduction of transition metals. Phys. Rev. B 4, 3548-3557 (1971).
10. Janousch, M. et al. Role of oxygen vacancies in Cr-doped SrTiO3 for resistancechange memory. Adv. Mater. 19, 2232-2235 (2007).
11. Yang, J. J. et al. Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429-433 (2008).
12. Miao, F. et al. Anatomy a nanoscale conduction channel reveals the mechanism of a high-performance memristor. Adv. Mater. 23, 5633-5640 (2011).
13. Lee, M. J. et al. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. Nano Lett. 9, 1476-1481 (2009).
14. Kwon, D.-H. et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat. Nanotech. 5, 148-153 (2010).
15. Regan, B. C., Aloni, S., Ritchie, R. O., Dahmen, U. & Zettl, A. Carbon nanotubes as nanoscale mass conveyors. Nature 428, 924-927 (2004).
16. Choi, S. J. et al. In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory. Adv. Mater. 23, 3272-3277 (2011).
17. Yang, Y. et al. Observation of conducting filament growth in nanoscale resistive memories. Nat. Commun. 732, 1-8 (2012).
18. Fujii, T., Arita, M., Takahashi, Y. & Fujiwara, I. In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching. Appl. Phys. Lett. 98, 212104 (2011).
19. Hur, J. H., Lee, M. J., Lee, C. B., Kim, Y. B. & Kim, C. J. Modeling for bipolar resistive memory switching in transition-metal oxides. Phys. Rev. B 82, 155321 (2010).
20. Nagao, T. Characterization of atomic-level plasmonic structures by low-energy EELS. Surf. Interface Anal. 40, 1764-1767 (2008).
21. Yang, J. J. et al. High switching endurance in TaOx memristive devices. Appl. Phys. Lett. 97, 232102 (2010).
22. Yang, Y., Choi, S. H. & Lu, W. Oxide heterostructure resistive memory. Nano Lett. 13, 2908-2915 (2013).
23. Ramprasad, R. First principles study of oxygen vacancy defects in tantalum pentoxide. J. Appl. Phys. 94, 5609-5612 (2003).
24. Gu, T., Wang, Z., Tada, T. & Watanabe, S. First-principles simulations on bulk Ta2O5 and Cu/Ta2O5/Pt heterojunction: electronic structures and transport properties. J. Appl. Phys. 106, 103713 (2009).
25. Gu, T., Tada, T. & Watanabe, S. Conductive path formation in the Ta2O5 atomic switch: first-principles analyses. ACS Nano 4, 2515-2522 (2010).
26. Lee, C. B. et al. Highly uniform switching of tantalum embedded amorphous oxide using self-compliance bipolar resistive switching. IEEE Electron Dev. Lett. 32, 399-401 (2011).
27. Wei, Z. et al. Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism. IEEE Int. Electron Dev. Meet. Tech. Dig. 293, 5671467 (2008).
28. GaO, P. et al. In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides. Micron 41, 301-305 (2010).
29. Klenov, D. O. & Stemmer, S. Contribution to the contrast in experimental highangle annular dark-field images. Ultramicroscopy 106, 889-901 (2006).
30. Liu, Q. et al. Controllable growth of nanoscale conductive filaments in solidelectrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. ACS Nano 4, 6162-6168 (2010).
31. Strukov, D. & Williams, R. Intrinsic constrains on thermally-assisted memristive switching. Appl. Phys. A 102, 851-855 (2011).
32. Guan, W., Liu, M., Long, S., Liu, Q. & Wang, W. On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt. Appl. Phys. Lett. 93, 223506 (2008).
33. Park, G.-S. et al. Observation of electric-field induced Ni filament channels in polycrystalline NiOx film. Appl. Phys. Lett. 91, 222103 (2007).
34. Strachan, J. P. et al. Spectromicroscopy of tantalum oxide memristors. Appl. Phys. Lett. 98, 242114 (2011).
35. Magyari-Köpe, B., Park, S., Lee, H. & Nishi, Y. Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations. ECS Trans. 37, 167-178 (2011).
36. Sheng, H. W., Luo,W. K., Alamgir, F. M., Bai, J. M. & Ma, E. Atomic packing and short-to-medium range order in metallic glasses. Nature 439, 419-425 (2006).
37. Strachan, J. P. et al. Direct identification of the conducting channels in a functioning memristive device. Adv. Mater. 22, 3573-3577 (2010).
38. Henkelman, G. & Jónsson, H. Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points. J. Chem. Phys. 113, 9978-9985 (2000).
39. McHale, A. E. & Tuller, H. L. Defects and charge transport in b-Ta2O5: I, analysis of the conductivity observed in nominally pure b-Ta2O5. J. Am. Ceram. Soc. 68, 646-650 (1985).
40. Inoue, I. H., Yasuda, S., Akinaga, H. & Takagi, H. Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution. Phys. Rev. B 77, 035105 (2008).
41. Singh, B., Mehta, B. R., Varandani, D., Savu, A. V. & Brugger, J. CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique. Nanotechnology 23, 495707 (2012).