Determination of complex dielectric functions at HfO2/Si interface by using STEM-VEELS

Micron

Volumn 40, Issue 3, 2009, Pages 365-369

  Park, Jucheol ^a   Yang, Mino ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Complex dielectric functions; Dielectric constant; HfO2; STEM; VEELS

Indexed keywords

COMPLEX DIELECTRIC FUNCTIONS; DIELECTRIC CONSTANT; HFO2; STEM; VEELS;

CERAMIC CAPACITORS; DENSITY FUNCTIONAL THEORY; DIELECTRIC WAVEGUIDES; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; ENERGY DISSIPATION; FUNCTIONS; HAFNIUM COMPOUNDS; LIGHT REFRACTION; PERMITTIVITY; PROGRAMMING THEORY; REFRACTIVE INDEX; REFRACTOMETERS; TRANSMISSION ELECTRON MICROSCOPY;

PROBABILITY DENSITY FUNCTION;

HAFNIUM; OXIDE; SILICON;

ALGORITHM; ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; ELECTRON ENERGY LOSS SPECTROSCOPY; METHODOLOGY; REFRACTOMETRY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR;

ALGORITHMS; HAFNIUM; MICROSCOPY, ELECTRON, SCANNING; MOLECULAR STRUCTURE; OXIDES; REFRACTOMETRY; SEMICONDUCTORS; SILICON; SPECTROSCOPY, ELECTRON ENERGY-LOSS;

EID: 59149084242     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2008.10.006     Document Type: Article

References (10)

1. 2 dielectrics. Applied Physics Letters 85 (2004) 672-674
2. Egerton R.F. Electron Energy Loss Spectroscopy in the Electron Microscope. 2nd ed. (1996), Plenum Press, New York
3. French R., Müllejans H., and Jones D. Journal of American Ceramic Society 81 10 (1998) 2549
4. Dorneich A.D., French R.H., Müllejans H., Loughin S., and Rühle M. Quantitative analysis of valence electron energy-loss spectra of aluminum nitride. Journal of Microscopy 191 3 (1998) 286-296
5. 3. Journal of Physics D: Applied Physics 38 (2005) 183-187
6. Müllejans H., and French R.H. Interband electronic structure of a near- Σ11 grain boundary in α-alumina determined by spatially resolved valence electron energy-loss spectroscopy. Journal of Physics D: Applied Physics 29 (1996) 1751-1760
7. 3 films using transmission electron energy-loss spectroscopy. Journal of Applied Physics 85 5 (1999) 2828-2834
8. Stöger-Pollach M., Hebert C., Zandbergen H.W., and Schattschneider P. Thickness dependent loss function of Si with 0.14 eV energy resolution. Advanced Engineering Materials 6 (2004) 826-828
9. 3: experiment and theory. Journal of Applied Physics 90 12 (2001) 6156-6164
10. 3 and a Σ13 boundary: electron structure and dispersion forces. Ultramicroscopy 86 (2001) 303-318