Charge transport and degradation in HfO2 and HfOx dielectrics

IEEE Electron Device Letters

Volumn 34, Issue 5, 2013, Pages 680-682

  Padovani, Andrea ^a,b   Larcher, Luca ^a   Bersuker, Gennadi ^c   Pavan, Paolo ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b INTERMECH MORE Center   (Italy)

^c SEMATECH   (United States)

Author keywords

device physics; dielectric breakdown; HfO2; oxygen vacancies; random access memory (RRAM); resistive switching memories; stoichiometry; time dependent dielectric breakdown (TDDB); trap assisted tunneling

Indexed keywords

DEVICE PHYSICS; HFO2; RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORY; TIME-DEPENDENT DIELECTRIC BREAKDOWN; TRAP ASSISTED TUNNELING;

ACTIVATION ENERGY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; EXPERIMENTS; HAFNIUM OXIDES; OXYGEN VACANCIES; RANDOM ACCESS STORAGE; STOICHIOMETRY;

LEAKAGE CURRENTS;

EID: 84877005422     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2251602     Document Type: Article

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