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Volumn 47, Issue 6, 2014, Pages

High-k-rare-earth-oxide Eu2O3 films for transparent resistive random access memory (RRAM) devices

Author keywords

conduction mechanism; Eu2O3 films; forming free resistance switching; oxygen vacancy; transparent resistive random access memory

Indexed keywords

BIPOLAR RESISTANCE SWITCHING; CONDUCTION MECHANISM; HIGH-RESOLUTION SPECTROSCOPY; OXYGEN ION MIGRATIONS; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); TEMPERATURE DEPENDENCE;

EID: 84893184307     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/6/065302     Document Type: Article
Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.