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Volumn 61, Issue 5, 2014, Pages 1278-1283

The degradation process of high-k SiO2/HfO2 gate-stacks: A combined experimental and first principles investigation

Author keywords

Density functional theory (DFT); high k; leakage current; MOSFETs; nonequilibrium Green's function (NEGF); oxygen vacancies; stress induced leakage current (SILC)

Indexed keywords

DENSITY FUNCTIONAL THEORY; DIELECTRIC MATERIALS; GREEN'S FUNCTION; HAFNIUM OXIDES; LEAKAGE CURRENTS; OXYGEN VACANCIES;

EID: 84899704772     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2313229     Document Type: Article
Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.