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Journal of Applied Physics

Volumn 113, Issue 6, 2013, Pages

Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

(8) Lin, Y S a Zeng, F a Tang, S G a Liu, H Y a Chen, C a Gao, S a Wang, Y G a Pan, F a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CONDUCTING PATHS; CONSTANT LEVEL; CROSS SECTIONAL IMAGE; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; RESISTIVE SWITCHING MECHANISMS; SWITCHING REGIONS;

HAFNIUM; OXYGEN VACANCIES; PHOTOELECTRONS; PLATINUM; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE STATES;

EID: 84874314756 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4791695 Document Type: Article

Times cited : (88)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.