Improved uniformity of resistive switching behaviors in Hf O2 thin films with embedded Al layers

Electrochemical and Solid-State Letters

Volumn 13, Issue 2, 2010, Pages

  Yu, Shimeng ^a,d   Gao, Bin ^a   Dai, Haibo ^b   Sun, Bing ^a   Liu, Lifeng ^a   Liu, Xiaoyan ^a   Han, Ruqi ^a   Kang, Jinfeng ^a   Yu, Bin ^c  

^a PEKING UNIVERSITY   (China)

^b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

^c STATE UNIVERSITY OF NEW YORK   (United States)

^d Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; ELECTRODE LAYERS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MEMORIES; SET VOLTAGE; SWITCHING PARAMETERS; TECHNICAL SOLUTIONS;

ALUMINUM; CONDUCTIVE FILMS; OXYGEN; OXYGEN VACANCIES; SWITCHING; SWITCHING SYSTEMS; THIN FILMS; VACANCIES;

HAFNIUM;

EID: 74249119926     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3267050     Document Type: Article

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