Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1934-1937

  Jo, Minseok ^a   Park, Hokyung ^a   Chang, Man ^a   Jung, Hyung Suk ^b   Lee, Jong Ho ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Charge trapping; Hafnium oxide; nMOSFET; Oxygen vacancy; Positive bias temperature instability

Indexed keywords

AMMONIA; ANNEALING; HAFNIUM COMPOUNDS; MOSFET DEVICES; OXYGEN VACANCIES; TEMPERATURE MEASUREMENT;

HAFNIUM OXIDES; POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI); POST DEPOSITION ANNEALING (PDA);

CHARGE TRAPPING;

EID: 34248649079     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.025     Document Type: Article

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