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Volumn 114, Issue 3, 2013, Pages

Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal-oxide-semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

CMOS DEVICES; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DEVICE INTEGRATION; EFFECTIVE WORK FUNCTION; GATE STACKS; INTERFACE STOICHIOMETRY; INTERSTITIALS; THRESHOLD VOLTAGE VARIATION;

EID: 84880785953     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816090     Document Type: Article
Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.