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Volumn 100, Issue 23, 2012, Pages

Interfacial layer growth condition dependent carrier transport mechanisms in HfO 2/SiO 2 gate stacks

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE ELECTRONS; CHARGED OXYGEN VACANCIES; GATE STACKS; HIGH FIELD; IN-SITU; INTERFACIAL LAYER; LOW-FIELD REGION; OHMIC CONDUCTION; POOLE-FRENKEL MECHANISMS; TEMPERATURE RANGE; TRANSPORT MECHANISM; TRAP ENERGY LEVELS; TRAP LEVELS;

EID: 84862154855     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4726186     Document Type: Article
Times cited : (22)

References (22)
  • 10
    • 33845795718 scopus 로고    scopus 로고
    • 10.1063/1.2401657
    • F.-C. Chiu, J. Appl. Phys. 100, 114102 (2006). 10.1063/1.2401657
    • (2006) J. Appl. Phys. , vol.100 , pp. 114102
    • Chiu, F.-C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.