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Volumn 109, Issue 2, 2011, Pages

Investigation of oxygen-related defects and the electrical properties of atomic layer deposited HfO2 films using electron energy-loss spectroscopy

(6) Jang, Jae Hyuck a Jung, Hyung Suk a,b Kim, Jeong Hwan a,b Lee, Sang Young a,b Hwang, Cheol Seong a,b Kim, Miyoung a

a Seoul National University (South Korea)

b Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CONSTANT VOLTAGE STRESS; ELECTRICAL PROPERTY; HAFNIUM DIOXIDE; INITIAL OXIDATION; LOCAL SYMMETRY; MONOCLINIC PHASE; OXYGEN ATOM; OXYGEN CONTENT; OXYGEN SOURCES; OXYGEN-RELATED DEFECTS; POLYCRYSTALLINE; POST DEPOSITION ANNEALING; PULSE TIME; SYSTEMATIC STUDY; TETRAGONAL PHASE; VFB SHIFT;

AMORPHOUS FILMS; ATOMIC SPECTROSCOPY; ATOMS; DEFECTS; DISSOCIATION; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONIC PROPERTIES; ELECTRONIC STATES; ELECTRONIC STRUCTURE; HAFNIUM; HAFNIUM OXIDES; LEAKAGE CURRENTS; THIN FILMS; VAPOR DEPOSITION;

OXYGEN;

EID: 79551661539 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3544039 Document Type: Article

Times cited : (31)

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