In situ electron holography study of charge distribution in high-κ charge-trapping memory

Nature Communications

Volumn 4, Issue , 2013, Pages

  Yao, Y ^a   Li, C ^a   Huo, Z L ^b   Liu, M ^b   Zhu, C X ^b   Gu, C Z ^a   Duan, X F ^a   Wang, Y G ^a   Gu, L ^a   Yu, R C ^a  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD; FILM; HOLOGRAPHY; INSULATION; NUMERICAL MODEL; PERFORMANCE ASSESSMENT;

ARTICLE; CHARGE TRAPPING MEMORY; DATA STORAGE DEVICE; DIFFRACTION; ELECTRICITY; ELECTRON BEAM; ELECTRON TRANSPORT; EXTERNAL BIAS; HOLOGRAPHY; INSULATOR ELEMENT; IONIZATION; MEASUREMENT; SURFACE CHARGE; VACUUM;

EID: 84889253441     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3764     Document Type: Article

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