Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

Journal of Applied Physics

Volumn 117, Issue 5, 2015, Pages

  McDaniel, Martin D ^a   Hu, Chengqing ^a   Lu, Sirong ^b   Ngo, Thong Q ^a   Posadas, Agham ^c   Jiang, Aiting ^a   Smith, David J ^b   Yu, Edward T ^a   Demkov, Alexander A ^c   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; CRYSTALLINITY; DIELECTRIC DEVICES; ELECTRONIC PROPERTIES; GATE DIELECTRICS; HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; OXIDE FILMS; PEROVSKITE; STRONTIUM COMPOUNDS;

CRYSTALLINE FILMS; CRYSTALLINE OXIDES; ELECTRONIC APPLICATION; EQUIVALENT OXIDE THICKNESS; HIGH- K GATE DIELECTRICS; INTERFACE TRAP DENSITY; LOW-LEAKAGE CURRENT; STRONTIUM HAFNATE;

GERMANIUM;

EID: 84923668616     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4906953     Document Type: Article

References (57)

1. K. Rim, R. Anderson, D. Boyd, F. Cardone, K. Chan, H. Chen, S. Christansen, J. Chu, K. Jenkins, T. Kanarsky, S. Koester, B. H. Lee, K. Lee, V. Mazzeo, A. Mocuta, D. Mocuta, P. M. Mooney, P. Oldiges, J. Ott, P. Ronsheim, R. Roy, A. Steegen, M. Yang, H. Zhu, M. Ieong, and H. S. P. Wong, Solid-State Electron. 47, 1133 (2003). 10.1016/S0038-1101(03)00041-8
2. S. E. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, and T. Hoffman, IEEE Trans. Electron. Devices 51, 1790 (2004). 10.1109/TED.2004.836648
3. R. Chau, B. Doyle, S. Datta, J. Kavalieros, and K. Zhang, Nat. Mater. 6, 810 (2007). 10.1038/nmat2014
4. K. C. Saraswat, C. O. Chui, T. Krishnamohan, A. Nayfeh, and P. McIntyre, Microelectron. Eng. 80, 15 (2005). 10.1016/j.mee.2005.04.038
5. D. P. Brunco, B. De Jaeger, G. Eneman, A. Satta, V. Terzieva, L. Souriau, F. E. Leys, G. Pourtois, M. Houssa, K. Opsomer, G. Nicholas, M. Meurius, and M. Heyns, ECS Trans. 11, 479 (2007). 10.1149/1.2779584
6. R. Pillarisetty, Nature 479, 324 (2011). 10.1038/nature10678
7. S. Gupta, X. Gong, R. Zhang, Y.-C. Yeo, S. Takagi, and K. C. Saraswat, MRS Bull. 39, 678 (2014). 10.1557/mrs.2014.163
8. R. Droopad, K. Eisenbeiser, and A. A. Demkov, in High Dielectric Constant Materials, edited by H. R. Huff and D. C. Gilmer (Springer, Berlin, Heidelberg, 2005), Vol. 16, p. 639.
9. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998). 10.1103/PhysRevLett.81.3014
10. R. Droopad, Z. Yu, J. Ramdani, L. Hilt, J. Curless, C. Overgaard, J. L. Edwards, Jr., J. Finder, K. Eisenbeiser, and W. Ooms, Mater. Sci. Eng. B 87, 292 (2001). 10.1016/S0921-5107(01)00727-9
11. R. John, Rep. Prog. Phys. 69, 327 (2006). 10.1088/0034-4885/69/2/R02
12. A. A. Demkov, A. B. Posadas, H. Seo, M. Choi, K. J. Kormondy, P. Ponath, R. C. Hatch, M. D. McDaniel, T. Q. Ngo, and J. G. Ekerdt, ECS Trans. 54, 255 (2013). 10.1149/05401.0255ecst
13. C. Claeys and E. Simoen, Germanium-Based Technologies: From Materials to Devices (Elsevier Science, 2007).
14. Y. Kamata, Mater. Today 11, 30 (2008). 10.1016/S1369-7021(07)70350-4
15. K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, and A. Toriumi, Appl. Surf. Sci. 254, 6100 (2008). 10.1016/j.apsusc.2008.02.158
16. M. Caymax, M. Houssa, G. Pourtois, F. Bellenger, K. Martens, A. Delabie, and S. Van Elshocht, Appl. Surf. Sci. 254, 6094 (2008). 10.1016/j.apsusc.2008.02.134
17. R. M. Wallace, P. C. McIntyre, J. Kim, and Y. Nishi, MRS Bull. 34, 493 (2009). 10.1557/mrs2009.137
18. I.-K. Oh, M.-K. Kim, J.-S. Lee, C.-W. Lee, C. Lansalot-Matras, W. Noh, J. Park, A. Noori, D. Thompson, S. Chu, W. J. Maeng, and H. Kim, Appl. Surf. Sci. 287, 349 (2013). 10.1016/j.apsusc.2013.09.153
19. K. D. Fredrickson, P. Ponath, A. B. Posadas, M. R. McCartney, T. Aoki, D. J. Smith, and A. A. Demkov, Appl. Phys. Lett. 104, 242908 (2014). 10.1063/1.4883883
20. R. A. McKee, F. J. Walker, and M. F. Chisholm, Science 293, 468 (2001). 10.1126/science.293.5529.468
21. S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, and J. Ramdani, J. Vac. Sci. Technol. A 19, 934 (2001). 10.1116/1.1365132
22. F. Amy, A. S. Wan, A. Kahn, F. J. Walker, and R. A. McKee, J. Appl. Phys. 96, 1635 (2004). 10.1063/1.1766417
23. M. D. McDaniel, T. Q. Ngo, A. Posadas, C. Hu, S. Lu, D. J. Smith, E. T. Yu, A. A. Demkov, and J. G. Ekerdt, Adv. Mater. Interfaces 1 (8), 1400081 (2014). 10.1002/admi.201400081
24. I. McCarthy, M. P. Agustin, S. Shamuilia, S. Stemmer, V. V. Afanas'ev, and S. A. Campbell, Thin Solid Films 515, 2527 (2006). 10.1016/j.tsf.2006.07.030
25. C. Rossel, B. Mereu, C. Marchiori, D. Caimi, M. Sousa, A. Guiller, H. Siegwart, R. Germann, J. P. Locquet, J. Fompeyrine, D. J. Webb, C. Dieker, and J. W. Seo, Appl. Phys. Lett. 89, 053506 (2006). 10.1063/1.2236464
26. M. Sousa, C. Rossel, C. Marchiori, H. Siegwart, D. Caimi, J.-P. Locquet, D. J. Webb, R. Germann, J. Fompeyrine, K. Babich, J. W. Seo, and C. Dieker, J. Appl. Phys. 102, 104103 (2007). 10.1063/1.2812425
27. C. Rossel, M. Sousa, C. Marchiori, J. Fompeyrine, D. Webb, D. Caimi, B. Mereu, A. Ispas, J. P. Locquet, H. Siegwart, R. Germann, A. Tapponnier, and K. Babich, Microelectron. Eng. 84, 1869 (2007). 10.1016/j.mee.2007.04.029
28. G. Lupina, G. Kozłowski, J. Dabrowski, P. Dudek, G. Lippert, and H.-J. MussigMussig, Appl. Phys. Lett. 93, 252907 (2008). 10.1063/1.3049611
29. G. Åupina, O. Seifarth, G. Kozłowski, P. Dudek, J. DÄbrowski, G. Lippert, and H. J. Müssig, Microelectron. Eng. 86, 1842 (2009). 10.1016/j.mee.2009.03.019
30. M. Sawkar-Mathur, C. Marchiori, J. Fompeyrine, M. F. Toney, J. Bargar, and J. P. Chang, Thin Solid Films 518, S118 (2010). 10.1016/j.tsf.2009.10.068
31. G. Lupina, O. Seifarth, P. Dudek, G. Kozlowski, J. Dabrowski, H.-J. Thieme, G. Lippert, T. Schroeder, and H.-J. Müssig, Phys. Status Solidi B 248, 323 (2011). 10.1002/pssb.201046456
32. K. Black, M. Werner, R. Rowlands-Jones, P. R. Chalker, and M. J. Rosseinsky, Chem. Mater. 23, 2518 (2011). 10.1021/cm200315u
33. A. S. Verma and V. K. Jindal, J. Alloys Compd. 485, 514 (2009). 10.1016/j.jallcom.2009.06.001
34. L. Bjaalie, B. Himmetoglu, L. Weston, A. Janotti, and C. G. Van de Walle, New J. Phys. 16, 025005 (2014). 10.1088/1367-2630/16/2/025005
35. X. Zhang, A. A. Demkov, H. Li, X. Hu, Y. Wei, and J. Kulik, Phys. Rev. B 68, 125323 (2003). 10.1103/PhysRevB.68.125323
36. Manufactured and supplied by Air Liquide ALOHA Electronics Performance Materials, Air Liquide Electronics U.S. LP, Houston, TX.
37. Manufactured and supplied by Dow Electronic Materials, The Dow Chemical Company, North Andover, MA.
38. R. Katamreddy, V. Omarjee, B. Feist, C. Dussarrat, M. Singh, and C. Takoudis, ECS Trans. 16, 487 (2008). 10.1149/1.2981630
39. R. Katamreddy, Z. Wang, V. Omarjee, P. V. Rao, C. Dussarrat, and N. Blasco, ECS Trans. 25, 217 (2009). 10.1149/1.3205057
40. B. Willis and C. B. Zhang, ECS Trans. 33, 51 (2010). 10.1149/1.3485241
41. C. B. Zhang, L. Wielunski, and B. G. Willis, Appl. Surf. Sci. 257, 4826 (2011). 10.1016/j.apsusc.2010.12.098
42. S. W. Lee, J. H. Han, S. Han, W. Lee, J. H. Jang, M. Seo, S. K. Kim, C. Dussarrat, J. Gatineau, Y.-S. Min, and C. S. Hwang, Chem. Mater. 23, 2227 (2011). 10.1021/cm2002572
43. W. Lee, J. H. Han, W. Jeon, Y. W. Yoo, S. W. Lee, S. K. Kim, C.-H. Ko, C. Lansalot-Matras, and C. S. Hwang, Chem. Mater. 25, 953 (2013). 10.1021/cm304125e
44. M. D. McDaniel, A. Posadas, T. Q. Ngo, A. Dhamdhere, D. J. Smith, A. A. Demkov, and J. G. Ekerdt, J. Vac. Sci. Technol. A 31, 01A136 (2013). 10.1116/1.4770291
45. M. D. McDaniel, A. Posadas, T. Q. Ngo, C. M. Karako, J. Bruley, M. M. Frank, V. Narayanan, A. A. Demkov, and J. G. Ekerdt, J. Appl. Phys. 115, 224108 (2014). 10.1063/1.4883767
46. H. Li and D. V. Shenai, Symposium C-CMOS Gate-Stack Scaling-Materials, Interfaces and Reliability Implications (Mater. Res. Soc. Symp. Proc., 2009), Vol. 1155, p. C04.
47. C. D. Wagner, J. Electron. Spectrosc. Relat. Phenom. 32, 99 (1983). 10.1016/0368-2048(83)85087-7
48. K. Martens, C. O. Chui, G. Brammertz, B. De Jaeger, D. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes, and G. Groeseneken, IEEE Trans. Electron. Devices 55, 547 (2008). 10.1109/TED.2007.912365
49. S. Yamanaka, T. Maekawa, H. Muta, T. Matsuda, S.-i. Kobayashi, and K. Kurosaki, J. Alloys Compd. 381, 295 (2004). 10.1016/j.jallcom.2004.03.113
50. O. Madelung, Semiconductors-Data Handbook (Springer, 2004).
51. D. G. Schlom, S. Guha, and S. Datta, MRS Bull. 33, 1017 (2008). 10.1557/mrs2008.221
52. M. D. Groner, J. W. Elam, F. H. Fabreguette, and S. M. George, Thin Solid Films 413, 186 (2002). 10.1016/S0040-6090(02)00438-8
53. M. D. Groner, F. H. Fabreguette, J. W. Elam, and S. M. George, Chem. Mater. 16, 639 (2004). 10.1021/cm0304546
54. S. Gaudet, C. Detavernier, A. J. Kellock, P. Desjardins, and C. Lavoie, J. Vac. Sci. Technol. A 24, 474 (2006). 10.1116/1.2191861
55. P. E. J. Eriksson and R. I. G. Uhrberg, Phys. Rev. B 81, 125443 (2010). 10.1103/PhysRevB.81.125443
56. G. Pourtois, M. Houssa, A. Delabie, T. Conard, M. Caymax, M. Meuris, and M. M. Heyns, Appl. Phys. Lett. 92, 032105 (2008). 10.1063/1.2833696
57. A. Molle, M. N. K. Bhuiyan, G. Tallarida, and M. Fanciulli, Appl. Phys. Lett. 89, 083504 (2006). 10.1063/1.2337543