SCOPUS 정보 검색 플랫폼

Volumn 287, Issue , 2013, Pages 349-354

The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition

(12) Oh, Il Kwon a Kim, Min Kyu a Lee, Jae Seung a Lee, Chang Wan a,b Lansalot Matras, Clement a Noh, Wontae a Park, Jusang a Noori, Atif c Thompson, David c Chu, Schubert c Maeng, W J d Kim, Hyungjun a

a Yonsei University (South Korea)

b Korea Research Institute of Chemical Technology (South Korea)

c APPLIED MATERIALS INC (United States)

d UNIVERSITY OF WISCONSIN MADISON (United States)

Author keywords

Bilayer; Doping; High germanate

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; CHEMICAL ANALYSIS; CHEMICAL BONDS; DOPING (ADDITIVES); HAFNIUM OXIDES; INTERFACE STATES; LANTHANUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

BI-LAYER; CAPACITANCE VOLTAGE; CHEMICAL COMPOSITIONS; CURRENT-VOLTAGE MEASUREMENTS; CYCLOPENTADIENYLS; GATE INSULATOR; GERMANATE; HFO2 DIELECTRIC;

GERMANIUM;

EID: 84897077964 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2013.09.153 Document Type: Article

Times cited : (36)

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