Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy

Materials Science and Engineering: B

Volumn 87, Issue 3, 2001, Pages 292-296

  Droopad, R ^a   Yu, Z ^a   Ramdani, J ^a   Hilt, L ^a   Curless, J ^a   Overgaard, C ^a   Edwards, J L ^a   Finder, J ^a   Eisenbeiser, K ^a   Ooms, W ^a  

^a MOTOROLA INC   (United States)

Author keywords

Dielectric constant; Epitaxial oxides; Reflection high energy electron diffraction

Indexed keywords

CARRIER MOBILITY; DIELECTRIC FILMS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; PERMITTIVITY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; STRONTIUM COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL OXIDES;

THIN FILMS;

EID: 0035915294     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00727-9     Document Type: Article

References (18)