Strontium hafnate films deposited by physical vapor deposition

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 2527-2530

  McCarthy, I ^a   Agustin, M P ^b   Shamuilia, S ^c   Stemmer, S ^b   Afanas'ev, V V ^c   Campbell, S A ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

^b Santa Barbara   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Insulators; Metal oxide Semiconductor Structure (MOS)

Indexed keywords

CAPACITORS; ELECTRIC INSULATORS; MOSFET DEVICES; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; STRONTIUM COMPOUNDS;

BANDGAP; NANOCRYSTALS; STRONTIUM HAFNATE FILMS;

THIN FILMS;

EID: 33750922370     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.030     Document Type: Article

References (24)

1. Campbell S.A., Gilmer D.C., Wang X., Hsieh M.T., Kim H.S., Gladfelter W.L., and Yan J.H. IEEE Trans. Electron Devices 44 (1997) 104
2. Kim H.S., Campbell S.A., and Gilmer D.C. IEEE Electron Device Lett. 18 (1997) 465
3. Wilk G.D., Wallace R.M., and Anthony J.M. J. Appl. Phys. 89 (2001) 5243
4. Ott A.W., Klaus J.W., Johnson J.M., and George S.M. Thin Solid Films 292 (1997) 135
5. Juppo M., Rahtu A., Ritala M., and Leskelä M. Langmuir 16 (2000) 4034
6. Gusev E.P., Cartier E., Buchanan D.A., Gribelyuk M., Copel M., Okorn-Schmidt H., and D'Emic C. Microelectron. Eng. 59 (2001) 341
7. Copel M., Gribelyuk M., and Gusev E. Appl. Phys. Lett. 76 (2000) 436
8. French R.H., Glass S.J., Ohuchi F.S., Xu Y.-N., and Ching W.Y. Phys. Rev., B 49 (1994) 5133
9. Ma T., Campbell S.A., Smith R., Hoilien N., He B., Gladfelter W.L., Hobbs C., Buchanan D., Taylor C., Gribelyuk M., Tiner M., Coppel M., and Lee J.J. IEEE Trans. Electron Devices 37 (2001) 2348
10. Robertson J. J. Vac. Sci. Technol., B 18 (2000) 1785
11. Lee S.J., Luan H.F., Bai W.P., Lee C.H., Jeon T.S., Senzaki Y., and Roberts D. International Electron Devices Meeting, San Francisco, U.S.A. (December 10-13 2000), Institute of Electrical and Electronics Engineers
12. Sayan S., Aravamudhan S., Busch B.W., Schulte W.H., Cosandey F., Wilk G.D., Gustafsson T., and Garfunkel E. J. Vac. Sci. Technol., A 20 (2002) 507
13. Zhao X., and Vanderbilt D. Phys. Rev., B 65 (2002) 233106
14. Visokay M.R., Chambers J.J., Rotondaro A.L.P., Shanware A., and Colombo L. Appl. Phys. Lett. 80 (2002) 3183
15. Rotondaro A.L.P., Visokay M.R., Chambers J.J., Shanware A., Khamankar R., Bu H., Laaksonen R.T., Tsung L., Douglas M., Kuan R., Bevan M.J., Grider T., McPherson J., and Colombo L. Symposium on VLSI Circuits, Digest of Technical Papers, Honolulu, HI, United States (Jun 11-13 2002) 148
16. Afanas'ev V.V., Stesmans A., Chen F., Li M., and Campbell S.A. J. Appl. Phys. 95 (2004) 7936
17. Li M., Agustin M.P., Klenov D.O., Zhang Z., Stemmer S., Gladfelter W.L., and Campbell S.A. J. Appl. Phys. 98 (2005) 054506
18. Paskaleva A., Bauer A.J., Lemberger M., and Zürcher S. J. Appl. Phys. 95 (2004) 5583
19. Hubbard K.J., and Schlom D.G. J. Mater. Res. 11 (1996) 2757
20. Kern W., and Puotinen D.A. RCA Rev. (1970) 187
21. Afanas'ev V.V., Houssa M., Stesmans A., and Heyns M.M. Appl. Phys. Lett. 78 (2001) 3073
22. Afanas'ev V.V., Houssa M., Stesmans A., and Heyns M.M. J. Appl. Phys. 91 (2002) 3079
23. Adamchuk V.K., and Afanas'ev V.V. Prog. Surf. Sci. 41 (1992) 111
24. Afanas'ev V.V., Stesmans A., Chen F., Shi X., and Campbell S.A. Appl. Phys. Lett. 81 (2002) 1053