SrHfO3 films grown on Si(100) by plasma-assisted atomic layer deposition

Chemistry of Materials

Volumn 23, Issue 10, 2011, Pages 2518-2520

  Black, K ^a   Werner, M ^a   Rowlands Jones, R ^a   Chalker, P R ^a   Rosseinsky, M J ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

ALD; Plasma assisted; Thin film and high ? dielectric

Indexed keywords

AIR-ANNEALING; ALD; ELECTRICAL CHARACTERIZATION; METAL OXIDE SEMICONDUCTOR; METAL PRECURSOR; OXFORD INSTRUMENTS; OXYGEN PLASMAS; PLASMA-ASSISTED; POWER SOURCES; RELATIVE PERMITTIVITY; SI (100) SUBSTRATE; SI(1 0 0); SUBSTRATE TEMPERATURE;

ATOMIC LAYER DEPOSITION; DIELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; HAFNIUM; MOS CAPACITORS; OXIDE FILMS; OXYGEN; PLASMAS; PULSED LASER DEPOSITION; SUBSTRATES;

PLASMA DEPOSITION;

EID: 79959934127     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm200315u     Document Type: Article

References (13)

1. International Technology Roadmap for Semiconductors 2009; http://www.itrs.net/links/2009ITRS/Home2009.htm
2. Sousa, M.; Rossel, C.; Marchiori, C.; Siegwart, H.; Caimi, D.; Locquet, J. P.; Webb, D. J.; Germann, R.; Fompeyrine., J. J. Appl. Phys. 2007, 102, 104103.
3. Rossel, C.; Mereu, B.; Marchiori, C.; Caimi, D.; Sousa, M.; Guiller, A.; Siegwart, H.; Germann, R.; Locquet, J. P.; Fompeyrine, J.; Webb, D. J. Appl. Phys. Lett. 2006, 89, 053506.
4. McCarth, I.; Agustin,M. P.; Shamuilia, S .; Stemmer, S.; Afanas'ev, V. V.; Campbell, S. A. Thin Solid Films 2006, 515 (4), 2527-2530.
5. Luo, B.; Yu, D.; Kucera, B. E.; Campbell, S. A.; Gladfelter, W. L. Chemical Vapor Deposition 2007, 13 (8), 381-388.
6. S. De Gendt, Bent, S. F.; Delabie, A.; Elam, J. W.; Kang, S. B.; O. van der Straten, L. A. Atomic Layer Deposition Applications 5; Vienna, Austria, October 4-9, 2009; ECS Transactions; The Electrochemical Society: Pennington, NJ, 2009; Vol. 25, Issue 4.
7. Andrieux, M.; Gasquéres, C.; Legros, C.; Gallet, I.; Herbst- Ghysel, M.; Condat, M.; Kessler, V. G.; Seisenbaeva, G. A.; Heintz, O.; Poissonnet, S. Appl. Surf. Sci. 2007, 253, 9091-9098.
8. Vehkamä̈ki, M.; Hanninen, T.; Ritala, M.; Leskelä, M.; Sajavaara, T.; Rauhala, E.; Keinonen, J. J. Chem. Vapor Deposition 2001, 7 (2), 75-80.
9. Vehkamäki, M.; Hatanpä̈ä̈, T.; Ritala, M.; Leskelä̈, M.; Väyrynen, S.; Rauhala, E. J. Chem. Vapor Deposition 2007, 13, 239-246.
10. Bailey, P.; Noakes, T. C. Q.; Woodruff, D. P. Surf. Sci. 1999, 426, 358.
11. Niinistö̈, L.; Pä̈ivä̈saari, J.; Niinistö̈, J.; Putkonen, M.; Nieminen, M. Phys. Status Solidi A 2004, 201 (No. 7), 1443-1452.
12. Yamanaka, S.; Maekawa, T.; Muta, H.; Matsuda, T.; Kobayashi, S.-i.; Kurosaki, K. J. Solid State Chem. 2004, 177, 3484-3489.
13. Zhao, C. Z.; Taylor, S.; Werner, M.; Chalker, P. R.; Gaskell, J. M.; Jones, A. C. J. Vac. Sci. Technol., B 2009, 27 (1), 333-337.