Structural properties of epitaxial SrHfO3 thin films on Si (001)

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Sawkar Mathur, Monica ^a   Marchiori, Chiara ^b   Fompeyrine, Jean ^b   Toney, Michael F ^c   Bargar, John ^c   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IBM RESEARCH ZURICH   (Switzerland)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Epitaxy; Oxide; Silicon

Indexed keywords

BONDING DISTANCES; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CRYSTALLINE QUALITY; EPITAXIAL RELATIONSHIPS; EPITAXY; EXAFS; EXTENDED X-RAY ABSORPTION SPECTROSCOPIES; FOUR-FOLD SYMMETRY; GRAZING INCIDENCE; LONG RANGE ORDERS; MINIMAL DEFECT; OXYGEN ATOM; SHORT RANGE ORDERS; SI(0 0 1); SI-BASED; SYNCHROTRON X RAY DIFFRACTION; XRD;

ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH; DIFFRACTION; FIELD EFFECT TRANSISTORS; HAFNIUM; LATTICE MISMATCH; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THIN FILMS; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 73649143886     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.068     Document Type: Article

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