Thin film reaction of transition metals with germanium

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 3, 2006, Pages 474-485

  Gaudet, S ^a   Detavernier, C ^b   Kellock, A J ^c   Desjardins, P ^a   Lavoie, C ^a,d  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b GHENT UNIVERSITY   (Belgium)

^c IBM ALMADEN RESEARCH CENTER   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GE-BASED MICROELECTRONIC CIRCUITS; THIN METAL FILMS; TIME-RESOLVED X-RAY DIFFRACTION;

AMORPHOUS MATERIALS; LIGHT SCATTERING; MICROELECTRONICS; SPUTTERING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

TRANSITION METALS;

EID: 33646537829     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2191861     Document Type: Article

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