Incorporation of la in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates

Journal of Applied Physics

Volumn 115, Issue 22, 2014, Pages

  McDaniel, Martin D ^a   Posadas, Agham ^b   Ngo, Thong Q ^a   Karako, Christine M ^c   Bruley, John ^d   Frank, Martin M ^d   Narayanan, Vijay ^d   Demkov, Alexander A ^b   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c UNIVERSITY OF DALLAS   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SILICON; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLINE OXIDES; CRYSTALLINE STRUCTURE AND ORIENTATIONS; FERROELECTRIC FIELD EFFECT TRANSISTORS; POST DEPOSITION ANNEALING; SELECTIVE INCORPORATIONS; SI (001) SUBSTRATE;

LANTHANUM;

EID: 84902503982     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4883767     Document Type: Article

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