Structure and strain relaxation effects of defects in InxGa1-xN epilayers

Journal of Applied Physics

Volumn 116, Issue 10, 2014, Pages

  Rhode, S L ^a   Fu, W Y ^a   Moram, M A ^a,b   Massabuau, F C P ^a   Kappers, M J ^a   McAleese, C ^a   Oehler, F ^a   Humphreys, C J ^a   Dusane, R O ^c   Sahonta, S L ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM METALLOGRAPHY; SAPPHIRE; SEMICONDUCTOR ALLOYS; STACKING FAULTS; SUBSTRATES;

BASAL PLANE STACKING FAULTS; IDENTICAL STRUCTURES; IN-PLANE COMPRESSIVE STRAIN; METAL-ORGANIC VAPOUR PHASE EPITAXY; STACKING MISMATCH BOUNDARIES; STRAIN RELAXATION EFFECTS; THERMAL MISMATCH STRAINS; THREADING DISLOCATION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 84907570203     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4894688     Document Type: Article

References (60)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994). 10.1063/1.111832
2. F. A. Ponce and D. P. Bour, Nature 386, 351 (1997). 10.1038/386351a0
3. J. Wu, W. Walukiewicz, K. M. Yu, W. Shan, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, W. K. Metzger, and S. Kurtz, J. Appl. Phys. 94, 6477 (2003). 10.1063/1.1618353
4. O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, Appl. Phys. Lett. 91, 132117 (2007). 10.1063/1.2793180
5. R. Singh, D. Doppalapudi, T. Moustakas, and L. Romano, Appl. Phys. Lett. 70, 1089 (1997). 10.1063/1.118493
6. T. Li, Q. Y. Wei, A. M. Fischer, J. Y. Huang, Y. U. Huang, F. A. Ponce, J. P. Liu, Z. Lochner, J.-H. Ryou, and R. D. Dupuis, Appl. Phys. Lett. 102, 041115 (2013). 10.1063/1.4789758
7. T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, Appl. Phys. Lett. 85, 3089 (2004). 10.1063/1.1804607
8. M. J. Davies, F. C.-P. Massabuau, P. Dawson, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, Phys. Status Solidi C 11, 710 (2014). 10.1002/pssc.201300451
9. S. Mahajan, Scr. Mater. 75, 1 (2014). 10.1016/j.scriptamat.2013.11.018
10. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, Appl. Phys. Lett. 72, 692 (1998). 10.1063/1.120844
11. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, Appl. Phys. Lett. 72, 710 (1998). 10.1063/1.120853
12. N. Sharma, P. Thomas, D. Tricker, and C. J. Humphreys, Appl. Phys. Lett. 77, 1274 (2000). 10.1063/1.1289904
13. F. Scholz, A. Sohmer, J. Off, V. Syganow, A. Dörnen, J.-S. Im, A. Hangleiter, and H. Lakner, Materials Science and Engineering B 50, 238 (1997). 10.1016/S0921-5107(97)00184-0
14. C. J. Sun, M. Z. Anwar, Q. Chen, J. W. Yang, M. Asif Khan, M. S. Shur, A. D. Bykhovski, Z. Lilliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 70, 2978 (1997). 10.1063/1.118762
15. S. Mahanty, M. Hao, T. Sugahara, R. S. Q. Fareed, Y. Morishima, Y. Naoi, T. Wang, and S. Sakai, Mater. Lett. 41, 67 (1999). 10.1016/S0167-577X(99)00105-6
16. N. Sharma, D. Tricker, P. Thomas, Z. Bougrioua, K. Jacobs, J. Cheyns, I. Moerman, T. Thrush, L. Considine, A. Boyd, and C. J. Humphreys, J. Cryst. Growth 230, 438 (2001). 10.1016/S0022-0248(01)01252-0
17. I.-H. Kim, H.-S. Park, Y.-J. Park, and T. Kim, Appl. Phys. Lett. 73, 1634 (1998). 10.1063/1.122229
18. T. L. Song, J. Appl. Phys. 98, 084906 (2005). 10.1063/1.2108148
19. H. K. Cho, J. Y. Lee, K. S. Kim, and G. M. Yang, J. Cryst. Growth 220, 197 (2000). 10.1016/S0022-0248(00)00744-2
20. M. A. Moram, C. S. Ghedia, D. V. S. Rao, J. S. Barnard, Y. Zhang, M. J. Kappers, and C. J. Humphreys, J. Appl. Phys. 106, 073513 (2009). 10.1063/1.3225920
21. M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, J. Appl. Phys. 99, 073505 (2006). 10.1063/1.2180532
22. F. C. Frank, Acta Cryst. 4, 497 (1951). 10.1107/S0365110X51001690
23. A. H. Cottrell, Proc. Phys. Soc. 62, 49 (1949). 10.1088/0370-1298/62/1/308
24. H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim, Appl. Phys. Lett. 79, 215 (2001). 10.1063/1.1384906
25. H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. J. Humphreys, J. Cryst. Growth 231, 466 (2001). 10.1016/S0022-0248(01)01522-6
26. S. M. Ting, J. C. Ramer, D. I. Florescu, V. N. Merai, B. E. Albert, A. Parekh, D. S. Lee, D. Lu, D. V. Christini, L. Liu, and E. A. Armour, J. Appl. Phys. 94, 1461 (2003). 10.1063/1.1586972
27. S.-L. Sahonta, M. J. Kappers, D. Zhu, T. J. Puchtler, T. Zhu, S. E. Bennett, C. J. Humphreys, and R. A. Oliver, Phys. Status Solidi A 210, 195 (2013). 10.1002/pssa.201200408
28. F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, Appl. Phys. Lett. 101, 212107 (2012). 10.1063/1.4768291
29. F. C-P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, and R. A. Oliver, "The impact of trench defects on the efficiency of InGaN/GaN light emitting diodes and implications for green gap," Appl. Phys. Lett. (to be published).
30. F. C.-P. Massabuau, L. Trinh-Xuan, D. Lodié, E. J. Thrush, D. Zhu, F. Oehler, T. Zhu, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, J. Appl. Phys. 113, 073505 (2013). 10.1063/1.4792505
31. E. Taylor, F. Fang, F. Oehler, P. R. Edwards, M. J. Kappers, K. Lorenz, E. Alves, C. McAleese, C. J. Humphreys, and R. W. Martin, Semicond. Sci. Technol. 28, 065011 (2013). 10.1088/0268-1242/28/6/065011
32. L. T. Romano, B. S. Krusor, M. D. McCluskey, D. P. Bour, and K. Nauka, Appl. Phys. Lett. 73, 1757 (1998). 10.1063/1.122272
33. H. K. Cho and G. M. Yang, J. Cryst. Growth 243, 124 (2002). 10.1016/S0022-0248(02)01492-6
34. T. Böttcher, S. Einfeldt, V. Kirchner, S. Figge, H. Heinke, D. Hommel, H. Selke, and P. L. Ryder, Appl. Phys. Lett. 73, 3232 (1998). 10.1063/1.122728
35. L. Görgens, O. Ambacher, M. Stutzmann, C. Miskys, F. Scholz, and J. Off, Appl. Phys. Lett. 76, 577 (2000). 10.1063/1.125822
36. M. D. McCluskey, C. G. Van de Walle, L. T. Romano, B. S. Krusor, and N. M. Johnson, J. Appl. Phys. 93, 4340 (2003). 10.1063/1.1560563
37. F. A. Ponce, S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya, H. Marui, and S. Tanaka, Phys. Status Solidi B 240, 273 (2003). 10.1002/pssb.200303527
38. C. A. Parker, J. C. Roberts, S. M. Bedair, M. J. Reed, S. X. Liu, N. A. El-Masry, and L. H. Robins, Appl. Phys. Lett. 75, 2566 (1999). 10.1063/1.125079
39. D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, J. Cryst. Growth 303, 314 (2007). 10.1016/j.jcrysgro.2006.12.054
40. S. Das Bakshi, J. Sumner, M. J. Kappers, and R. A. Oliver, J. Cryst. Growth 311, 232 (2009). 10.1016/j.jcrysgro.2008.11.015
41. M. J. Kappers, R. Datta, R. A. Oliver, F. D. G. Rayment, M. E. Vickers, and C. J. Humphreys, J. Cryst. Growth 300, 70 (2007). 10.1016/j.jcrysgro.2006.10.205
42. P. F. Fewster and N. L. Andrew, J. Appl. Phys. 74, 3121 (1993). 10.1063/1.354578
43. F. Oehler, M. E. Vickers, M. J. Kappers, C. J. Humphreys, and R. A. Oliver, Jpn. J. Appl. Phys., Part 1 52, 08JB29 (2013). 10.7567/JJAP.52.08JB29
44. K. P. O'Donnell, I. Fernandez-Torrente, P. R. Edwards, and R. W. Martin, J. Cryst. Growth 269, 100 (2004). 10.1016/j.jcrysgro.2004.05.040
45. S. Pereira, M. R. Correia, T. Monteiro, E. Pereira, M. R. Soares, and E. Alves, J. Cryst. Growth 230, 448 (2001). 10.1016/S0022-0248(01)01260-X
46. W. Y. Fu, C. J. Humphreys, and M. A. Moram, "PANIC: a 3D dislocation dynamics model for cubic or hexagonal epitaxial films and heterostructures," J. Mater. Phys. Solids (to be published); arXiv:1406.0780.
47. S. K. Rhode, M. K. Horton, M. J. Kappers, S. Zhang, C. J. Humphreys, R. O. Dusane, S.-L. Sahonta, and M. A. Moram, Phys. Rev. Lett. 111, 025502 (2013). 10.1103/PhysRevLett.111.025502
48. W. Lü, D. B. Li, C. R. Li, F. Shen, and Z. Zhang, J. Appl. Phys. 95, 4362 (2004). 10.1063/1.1667010
49. S. Srinivasan, L. Geng, R. Liu, F. A. Ponce, Y. Narukawa, and S. Tanaka, Appl. Phys. Lett. 83, 5187 (2003). 10.1063/1.1633029
50. Z. Liliental-Weber, Y. Chen, S. Ruvimov, and J. Washburn, Phys. Rev. Lett. 79, 2835 (1997). 10.1103/PhysRevLett.79.2835
51. Th. Kehagias, G. P. Dimitrakopulous, J. Kioseoglou, H. Kirmse, C. Giesen, M. Heuken, A. Georgakilas, W. Neumann, Th. Karakostas, and Ph. Komninou, Appl. Phys. Lett. 95, 071905 (2009). 10.1063/1.3204454
52. I. Horcas, R. Fernandez, J. M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A. M. Baro, Rev. Sci. Instrum. 78, 013705 (2007). 10.1063/1.2432410
53. Y. Zhang, M. J. Kappers, D. Zhu, F. Oehler, F. Gao, and C. J. Humphreys, Sol. Energy Mater. Sol. Cells 117, 279 (2013). 10.1016/j.solmat.2013.06.022
54. F. Y. Meng, M. Rao, N. Newman, R. Carpenter, and S. Mahajan, Acta Mater. 56, 4036 (2008). 10.1016/j.actamat.2008.04.026
55. F. Y. Meng, H. McFelea, R. Datta, U. Chowdhury, C. Werkhoven, C. Arena, and S. Mahajan, J. Appl. Phys. 110, 073503 (2011). 10.1063/1.3643001
56. I. Yonenaga, Y. Ohno, T. Taishi, and Y. Tokumoto, Phys. B 404, 4999 (2009). 10.1016/j.physb.2009.08.196
57. W. Y. Fu, K. Kahn, C. J. Humphreys, and M. A. Moram, "Controlling strain relaxation in epitaxial multilayers" (unpublished).
58. D. D. Perovic and D. C. Houghton, Inst. Phys. Conf. Ser. 146, 117 (1995).
59. S.-L. Sahonta, M. Q. Baines, D. Cherns, H. Amano, and F. A. Ponce, Phys. Status Solidi B 234, 952 (2002). 10.1002/1521-3951(200212)234:3<952::AID-PSSB952>3.0.CO;2-4
60. L. Sugiura, J. Appl. Phys. 81, 1633 (1997). 10.1063/1.364018