Fundamentals of X-ray diffraction characterisation of strain in GaN based compounds

Japanese Journal of Applied Physics

Volumn 52, Issue 8 PART 2, 2013, Pages

  Oehler, Fabrice ^a   Vickers, Mary E ^a   Kappers, Menno J ^a   Humphreys, Colin J ^a   Oliver, Rachel A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; GROUP III NITRIDES; LAYER STRUCTURES; REFERENCE DATA; REFERENCE VALUES; RELIABLE METHODS; RESIDUAL STRAINS; THREADING DISLOCATION DENSITIES;

CELLS; CRYSTALLOGRAPHY; CYTOLOGY; ELASTIC CONSTANTS; SAPPHIRE; SEMICONDUCTOR DOPING; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84882248781     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.08JB29     Document Type: Article

References (22)

1. H. Morkoç: Nitride Semiconductor Devices: Principles and Simulation Properties of Group-IV, III-V and II-VI Semiconductors Nitride Semiconductors (Wiley, New York, 2008) Vol. 1.
2. M. Moram and M. Vickers: Rep. Prog. Phys. 72 (2009) 036502.
3. T. Detchprohm, K. Hiramatsu, K. Itoh, and I. Akasaki: Jpn. J. Appl. Phys. 31 (1992) L1454.
4. V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert: J. Appl. Phys. 97 (2005) 013517.
5. H. Angerer, D. Brunner, F. Freudenberg, O. Ambacher, M. Stutzmann, R. Hopler, T. Metzger, E. Born, G. Dollinger, A. Bergmaier, S. Karsch, and H. J. Korner: Appl. Phys. Lett. 71 (1997) 1504.
6. M. R. Laskar, T. Ganguli, A. A. Rahman, A. Mukherjee, N. Hatui, M. R. Gokhale, and A. Bhattacharya: J. Appl. Phys. 109 (2011) 013107.
7. S. R. Lee, D. D. Koleske, M. H. Crawford, and J. J. Wierer, Jr.: J. Cryst. Growth 355 (2012) 63.
8. M. E. Vickers, J. L. Hollander, C. McAleese, M. J. Kappers, M. A. Moram, and C. J. Humphreys: J. Appl. Phys. 111 (2012) 043502.
9. M. E. Vickers, M. J. Kappers, T. M. Smeeton, E. J. Thrush, J. S. Barnard, and C. J. Humphreys: J. Appl. Phys. 94 (2003) 1565.
10. P. Gibart: Rep. Prog. Phys. 67 (2004) 667.
11. R. Oliver, M. Kappers, J. Sumner, R. Datta, and C. Humphreys: J. Cryst. Growth 289 (2006) 506.
12. T. Zhu and R. A. Oliver: Phys. Chem. Chem. Phys. 14 (2012) 9558.
13. P. F. Fewster and N. L. Andrew: J. Appl. Crystallogr. 28 (1995) 451.
14. W. L. Bond: Acta Crystallogr. 13 (1960) 814.
15. A. F. Wright: J. Appl. Phys. 82 (1997) 2833.
16. R. Dwiliński, R. Doradziński, J. Garczyński, L. P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi: J. Cryst. Growth 311 (2009) 3015.
17. E. Gadecka: International Tables for Crystallography (2006) C:505.
18. C. G. Van de Walle: Phys. Rev. B 68 (2003) 165209.
19. C. Balkas, C. Basceri, and R. Davis: Powder Diffr. 10 (1995) 266.
20. P. Kidd: XRD of Gallium Nitride and Related Compounds: Strain, Composition and Layer Thickness (Panalytical, Almelo, 2009).
21. J. S. Dyck, K. Kash, C. C. Hayman, A. Argoitia, M. T. Grossner, J. C. Angus, and W. Zhou: J. Mater. Res. 14 (1999) 2411.
22. A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck: J. Appl. Phys. 109 (2011) 103522.