The effect of dislocations on the efficiency of InGaN/GaN solar cells

Solar Energy Materials and Solar Cells

Volumn 117, Issue , 2013, Pages 279-284

  Zhang, Y ^a   Kappers, M J ^a   Zhu, D ^a   Oehler, F ^a   Gao, F ^b   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Defects; EQE; GaN; InGaN; TEM characterization

Indexed keywords

DISLOCATION DENSITIES; EFFECT OF DISLOCATIONS; EQE; EXTERNAL QUANTUM EFFICIENCY; GAN; INGAN; STRUCTURAL CHARACTERIZATION; TEM CHARACTERIZATION;

DEFECTS; GALLIUM NITRIDE; SAPPHIRE; SOLAR CELLS;

DEFECT DENSITY;

EID: 84880064916     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.06.022     Document Type: Article

References (20)

1. C.J. Humphreys Solid state lighting MRS Bulletin 33 2008 459 470
2. S. Nakamura, and G. Fasol The Blue Lasor Diode 2000 Springer Berlin
3. J.F. Muth, J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, B.P. Keller, U.K. Mishra, and S.P. Denbaars Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements Applied Physics Letters 71 1997 2572 2574 (Pubitemid 127608522)
4. xN alloys: full-solar spectrum photovoltaic material system Journal of Applied Physics 94 2003 6477 6482
5. D.J. Friedman Progress and challenges for next-generation high-efficiency multi-junction solar cells Current Opinion in Solid State and Materials Science 14 2010 131 138
6. C.J. Neufeld, N.G. Toledo, S.C. Cruz, M. Iza, S.P. DenBaars, and U.K. Mishra High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap Applied Physics Letters 93 2008 143502-1 143502-3
7. E. Matioli, C.J. Neufeld, M. Iza, S.C. Cruz, A.A. Al-Heji, X. Chen, R.M. Farrell, S. Keller, S.P. DenBaars, U.K. Mishra, S. Nakamura, J. Speck, and C. Weisbuch High internal and external quantum efficiency InGaN/GaN solar cells Applied Physics Letters 98 2011 021102
8. R.M. Farrell, C.J. Neufeld, S.C. Cruz, J.R. Lang, M. Iza, S. Keller, S. Nakamura, &QJ;S.P. DenBaars, U.K. Mishra, and J. Speck High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm Applied Physics Letters 98 2011 201107-1 201107-3
9. R. Datta, M.J. Kappers, M.E. Vickers, J.S. Barnard, and C.J. Humphreys Growth and characterization of GaN with reduced dislocation density Superlattices and Microstructures 36 2004 393 401
10. 3 Journal of Crystal Growth 289 2006 506 514 (Pubitemid 43374777)
11. F.C.P. Massabuau, S.L. Sahonta, L. Trinh-Xuan, S. Rhode, T.J. Puchtler, &QJ;M.J. Kappers, and C.J. Humphreys Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures Applied Physics Letters 101 2012 212107-1 212107-3
12. J.M. Cowley Scanning-transmission electron microscopy of thin specimens Ultramicroscopy 2 1976 3 16 (Pubitemid 8101847)
13. X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P.M. Petroff, S.P. DenBaars, &QJ;J.S. Speck, and S.J. Rosner Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells Applied Physics Letters 72 1998 692 694 (Pubitemid 128672383)
14. I.H. Kim, H.S. Park, Y.J. Park, and T. Kim Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films Applied Physics Letters 73 1998 1634 1636 (Pubitemid 128671935)
15. P.B. Hirsch, A. Howie, and R.B. Nicholson Electron Microscopy of Thin Crystals Huntington 1977 Krieger New York
16. R. Liu, J. Mei, S. Srinivasan, F.A. Ponce, H. Omiya, Y. Narukawa, and T. Mukai Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures Applied Physics Letters 89 2006 201911-1 201911-3
17. M.J. Kappers, J.L. Hollander, C. McAleese, C.F. Johnston, R.F. Broom, J.S. Barnard, M.E. Vickers, and C.J. Humphreys Growth and characterisation of semi-polar (11-22) InGaN/GaN MQW structures Journal of Crystal Growth 300 2007 155 159
18. J. Wu When group-III nitrides go infrared: new properties and perspectives Journal of Applied Physics 106 2009 011101-1 011101-28
19. S.J. Rosner, E.C. Carr, M.J. Ludowise, G. Girolami, and H.I. Erikson Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition Applied Physics Letters 70 1997 420 422 (Pubitemid 127663652)
20. D. Cherns, and C. Jiao Electron holography studies of the charge on dislocations in GaN Physical Review Letters 87 2001 205504-1 205504-4