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Volumn 230, Issue 3-4, 2001, Pages 448-453

Indium content determination related with structural and optical properties of InGaN layers

(6) Pereira, S a Correia, M R a Monteiro, T a Pereira, E a Soares, M R a Alves, E b

Author keywords

A1. Rutherford backscattering; A1. Solid solutions; A1. X ray diffraction; B1. Gallium compounds; B2. Semiconducting III V materials

Indexed keywords

ALUMINA; COMPOSITION EFFECTS; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RELAXATION PROCESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SOLID SOLUTIONS; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

OPTICAL BANDGAP;

SEMICONDUCTING FILMS;

EID: 0035451304 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01260-X Document Type: Article

Times cited : (11)

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