Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire

Journal of Applied Physics

Volumn 98, Issue 8, 2005, Pages

  Song, T L ^a  

^a MULTIMEDIA UNIVERSITY   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; SAPPHIRE SUBSTRATES; STRAIN RELAXATION; THERMAL EQUILIBRIUM;

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; INDIUM COMPOUNDS; NUCLEATION; RELAXATION PROCESSES; SAPPHIRE; STRAIN RATE; SUBSTRATES;

HETEROJUNCTIONS;

EID: 27744497957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2108148     Document Type: Article

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