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Volumn 113, Issue 7, 2013, Pages

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

AFM; BASAL PLANE STACKING FAULTS; BLUE-EMITTING; EMISSION PROPERTIES; INGAN/GAN; INGAN/GAN QUANTUM WELL; INTENSITY RATIO; NON-RADIATIVE RECOMBINATIONS; RED SHIFT; RED-SHIFTED; RED-SHIFTED EMISSION; SAMPLE SURFACE; STACKING MISMATCH BOUNDARIES; STRONG CORRELATION; SUB-SURFACES; SURROUNDING MATERIALS; SURROUNDING REGIONS;

EID: 84874609731     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792505     Document Type: Article
Times cited : (37)

References (22)
  • 13
    • 27744497957 scopus 로고    scopus 로고
    • 10.1063/1.2108148
    • T. L. Song, J. Appl. Phys. 98, 084906 (2005). 10.1063/1.2108148
    • (2005) J. Appl. Phys. , vol.98 , pp. 084906
    • Song, T.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.