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Volumn 102, Issue 4, 2013, Pages

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; CARRIER INJECTION; DIFFRACTION INTENSITY; ELECTRONIC AND OPTICAL PROPERTIES; ELECTROSTATIC POTENTIALS; EMISSION ENERGIES; INGAN/GAN QUANTUM WELL; INTERNAL FIELD; RECIPROCAL SPACE MAPPING; RECOMBINATION LIFETIME; SPATIAL HOMOGENEITY; UNDERLAYERS;

EID: 84873596412     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4789758     Document Type: Article
Times cited : (24)

References (14)
  • 11
  • 12
    • 78650956521 scopus 로고    scopus 로고
    • 10.1002/and201000112
    • F. A. Ponce, Ann. Phys. (Berlin) 523, 75 (2011). 10.1002/andp.201000112
    • (2011) Ann. Phys. (Berlin) , vol.523 , pp. 75
    • Ponce, F.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.