Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates

Semiconductor Science and Technology

Volumn 28, Issue 6, 2013, Pages

  Taylor, E ^a   Fang, F ^b,d   Oehler, F ^b   Edwards, P R ^a   Kappers, M J ^b   Lorenz, K ^c   Alves, E ^c   McAleese, C ^b,e   Humphreys, C J ^b   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^d Quantum Wafer Inc   (China)

^e AIXTRON Nanoinstruments Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL ANALYSIS; COMPOSITIONAL GRADIENTS; HYDROGEN FLOW RATE; HYPERSPECTRAL IMAGING; INDIUM GALLIUM NITRIDE; LUMINESCENCE STUDIES; RUTHERFORD BACK-SCATTERING SPECTROMETRY; WAVELENGTH DISPERSIVE X-RAY SPECTROSCOPIES;

EPILAYERS; FLOW RATE; GALLIUM ALLOYS; GROWTH TEMPERATURE; INDIUM ALLOYS; OPTOELECTRONIC DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION;

HYDROGEN;

EID: 84879375293     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/6/065011     Document Type: Article

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